Bay 1: Etching

Cleanroom Bay 1 sign

Plasma Cleaner

PIE Scientific Tergeo Plasma Cleaner

Automatic tabletop plasma cleaner for research laboratories and low-volume production. Sample cleaning for carbonaceous contamination removal and oxide reduction, surface treatment before biomedical coating, and improving the hydrophilicity of medical implants, optics, glass, and substrate cleaning before epoxy bonding, photoresist ashing, descum, and silicon wafer cleaning.

It is ideal for pre-cleaning hydrocarbon contamination on substrates with a maximum of 4 inches (100 mm) in diameter by utilizing high-purity Argon and Oxygen plasma.

PIE Scientific Tergeo Plasma Cleaner in the UConn IMS cleanroom

Reactive Ion Etcher

Advanced Vacuum Vision 320 Reactive Ion Etcher

RIE provides etch capability for R&D, prototyping, and low-volume production. This parallel-plate capacitance-based system is found in applications that include fundamental material studies, surface modification, semiconductor device fabrication, and failure analysis involving delayering.

The system is equipped with etching gases such as CF4, CHF3, SF6, Ar, and O2 which are used for etching various materials, including silicon oxide (SiO2), silicon nitride (Si3N4), isotropically etching silicon, and fluorine etchable metals. It is capable of securely holding samples up to the size of a 10-inch substrate.

Reactive ion etcher (REI) in the cleanroom at UConn IMS

Other Equipment

There are six wet chemistry fume hoods, a combination of stainless steel and polymer units designed for various chemical processing tasks (cleaning, wet etching, etc.) employed in semiconductor and microelectronic device fabrication.

Hood 6 in Bay Area 1 (Solvent Hood) provides a comprehensive selection of developers and removers for various development processes.

Bay 1 in UConn IMS cleanroon showing equipment and hood